Hi Gary,
InP is actually one of the fastest semiconductor technologies available today. The hetro-junction bipolar transistor (HBT) devices in this process have an unity current gain (ft) of 275GHz and a unity power gain of 600GHz (fmax).
The circuit is fully differential input and output. On the left are two mirror image inductors (small spiral circles) which help tune out the input capacitance.
This is an experimental circuit that emulates a square-law characteristic (Y=K*X^2) from DC to over 30GHz, it's use is intended to detect broadband Electromagnetic Energy over that range.
Getting your initials on the chip can be a good or bad thing, there's no hiding or blaming someone else if the chip doesn't work
One of the first folks to see this image from where is used to work, noted "who put the stuff in the upper left corner", I couldn't hide from that either
Best & Happy Holidays,
Mike